Resistance variable memory device and method of fabrication

Details Resistance variable memory device and method of fabrication Resistance variable memory device and method of fabrication

2007-03-13

2007-03-13

Pizarro, Marcos D. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

C257S441000, C257SE31029

Reexamination Certificate

active

10893299

ABSTRACT:
Methods and apparatus for providing a resistance variable memory device with agglomeration prevention and thermal stability. According to one embodiment, a resistance variable memory device is provided having at least one tin-chalcogenide layer proximate at least one chalcogenide glass layer. The invention also relates to methods of forming such a memory device.

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