Resistance variable memory apparatus

Details Resistance variable memory apparatus Resistance variable memory apparatus

2011-08-02

2011-08-02

Yoha, Connie C (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S189160, C365S189110, C365S175000

Reexamination Certificate

active

07990754

ABSTRACT:
A resistance variable memory apparatus (100) of the present invention includes a current suppressing element (116) which is connected in series with each resistance variable layer (114) and whose threshold voltage is VF, and is configured to apply a first voltage V1to a first wire (WL) associated with a selected nonvolatile memory element, apply a second voltage V2to a second wire (BL) associated with the selected nonvolatile memory element, apply a third voltage V3to a first wire (WL) which is not associated with the selected nonvolatile memory element and apply a fourth voltage V4to a second wire (BL) which is not associated with the selected memory element when writing data or reading data, wherein V2≦V3<V5and V5<V4≦V1are satisfied and (V1−V4)<VF or (V3−V2)<VF is satisfied when V5=(V1+V2)/2is a fifth voltage V5.

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