Resistance memory element and nonvolatile semiconductor memory

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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C365S149000

Reexamination Certificate

active

07668002

ABSTRACT:
A resistance memory element, which memorizes a high resistance state and a low resistance state and switches between the high resistance state and the low resistance state by an application of a voltage, includes a pair of electrodes and a resistance memory layer sandwiched between the pair of electrodes and including a first layer of a first resistance memory material and a second layer of a second resistance memory material. The current value of the resistance memory element in the writing operation can be drastically decreased, and a nonvolatile semiconductor memory device of high integration and low electric power consumption can be formed.

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W. W. Zhuang et al; “Novell Colossal Magnetoresistive Thin Film Nonovolatile Resistance Random Access Memory (RRAM)”; Tech. Digest IEDM 2002, pp. 193-196.
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Korean Office Action dated May 13, 2009, issued in corresponding Korean Application No. 10-2008-7000899.

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