Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2008-04-17
2010-12-28
Elms, Richard (Department: 2824)
Static information storage and retrieval
Systems using particular element
Resistive
C365S046000, C365S100000, C365S158000, C365S163000
Reexamination Certificate
active
07859886
ABSTRACT:
A resistance memory element memorizing a high resistance state or a low resistance state in a memory region and switched between the high resistance state and the low resistance state by an application of a voltage includes a resistance memory layer42of a resistance memory material, an electrode38and an electrode40arranged, sandwiching the resistance memory layer42. The electrode38and the electrode40are formed on the same surface, whereby the manufacturing process of the resistance memory element can be simplified.
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International Search Report of PCT/JP2005/019234, date of mailing Jan. 24, 2006.
Byrne Harry W
Elms Richard
Fujitsu Limited
Westerman Hattori Daniels & Adrian LLP
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