Resistance change memory device with stabilizing circuit...

Details Resistance change memory device with stabilizing circuit... Resistance change memory device with stabilizing circuit...

2011-08-09

2011-08-09

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S175000, C365S189160

Reexamination Certificate

active

07995372

ABSTRACT:
A resistance change memory device includes: a memory cell formed of a variable resistance element and a diode connected in series, the state of the variable resistance element being reversibly changed in accordance with applied voltage or current; and a stabilizing circuit so coupled in series to the current path of the memory cell as to serve for stabilizing the state change of the memory cell passively.

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U.S. Appl. No. 12/691,169, filed Jan. 21, 2010, Toda.
Y. Hosoi, et al., “High Speed Unipolar Switching Resistance RAM (RRAM) Technology”, IEEE International Electron Devices Meeting 2006, Technical Digest, 4 Pages.

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