Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2007-06-12
2008-07-01
Tran, Andrew Q. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Resistive
C365S163000, C365S230030
Reexamination Certificate
active
07394680
ABSTRACT:
A resistance change memory device including: a semiconductor substrate; at least one cell array formed above the semiconductor substrate to have a stack structure of a variable resistance element and an access element, the variable resistance element storing a high resistance state or a low resistance state in a non-volatile manner, the access element having such an off-state resistance value in a certain voltage range that is ten times or more as high as that in a select state; and a read/write circuit formed on the semiconductor substrate, wherein the variable resistance element includes: a recording layer formed of a composite compound containing at least one transition element and a cavity site for housing a cation ion; and electrodes formed on the opposite sides of the recording layer, one of the electrodes serving as a cation source in a write or erase mode for supplying a cation to the recording layer to be housed in the cavity site.
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Kubo Koichi
Toda Haruki
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tran Andrew Q.
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