Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2008-07-15
2008-07-15
Tran, Andrew Q. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Resistive
C365S163000, C365S230030
Reexamination Certificate
active
11761397
ABSTRACT:
A resistance change memory device including: a semiconductor substrate; at least one cell array formed above the semiconductor substrate, each memory cell having a stack structure of a variable resistance element and an access element, the access element having such an off-state resistance value in a certain voltage range that is ten times or more as high as that in a select state; and a read/write circuit formed on the semiconductor substrate as underlying the cell array, wherein the variable resistance element comprises a recording layer formed of a first composite compound expressed by AxMyOz(where “A” and “M” are cation elements different from each other; “O” oxygen; and 0.5≦x≦1.5, 0.5≦y≦2.5 and 1.5≦z≦4.5) and a second composite compound containing at least one transition element and a cavity site for housing a cation ion.
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Kubo Koichi
Toda Haruki
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tran Andrew Q.
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