Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2009-12-02
2011-12-06
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S158000, C365S171000, C365S130000
Reexamination Certificate
active
08072789
ABSTRACT:
A resistance-change memory device is provided and includes a stack constituting a tunnel magnetoresistance effect element that has a magnetic layer in which a direction of magnetization is switchable and that is formed on a conductive layer, and the stack is included in a resistance-change memory cell performing data writing utilizing a spin transfer effect caused by current injection. The stack is formed such that a line connecting centers of respective layers of the stack is tilted with respect to a direction perpendicular to a surface of the conductive layer having the stack formed thereon.
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Higo Yutaka
Hosomi Masanori
Ikarashi Minoru
Kano Hiroshi
Kusunoki Shin-ichiro
Ho Hoai V
Huang Min
K&L Gates LLP
Sony Corporation
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