Resistance-change memory device

Static information storage and retrieval – Systems using particular element – Ferroelectric

Reexamination Certificate

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Details

C365S158000, C365S171000, C365S130000

Reexamination Certificate

active

08072789

ABSTRACT:
A resistance-change memory device is provided and includes a stack constituting a tunnel magnetoresistance effect element that has a magnetic layer in which a direction of magnetization is switchable and that is formed on a conductive layer, and the stack is included in a resistance-change memory cell performing data writing utilizing a spin transfer effect caused by current injection. The stack is formed such that a line connecting centers of respective layers of the stack is tilted with respect to a direction perpendicular to a surface of the conductive layer having the stack formed thereon.

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