Resistance change memory device

Details Resistance change memory device Resistance change memory device

2007-06-11

2010-06-01

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S046000, C365S163000, C365S131000, C365S189140, C365S189170

Reexamination Certificate

active

07729158

ABSTRACT:
A resistance change memory device including: a semiconductor substrate; cell arrays stacked above the substrate, each having memory cells, bit lines and word lines; a read/write circuit formed on the semiconductor substrate; first and second vertical wirings disposed to connect the bit lines to the read/write circuit; and third vertical wirings disposed the word lines to the read/write circuit. The memory cell includes a variable resistance element for storing as information a resistance value, which has a recording layer composed of a composite compound containing at least two types of cation elements, at least one type of the cation element being a transition element having “d” orbit, in which electrons are incompletely filled, the shortest distance between adjacent cation elements being 0.32 nm or less.

REFERENCES:
patent: 5714768 (1998-02-01), Ovshinsky et al.
patent: 5825046 (1998-10-01), Czubatyj et al.
patent: 6141241 (2000-10-01), Ovshinsky et al.
patent: 6426891 (2002-07-01), Katori
patent: 6815744 (2004-11-01), Beck et al.
patent: 2004/0012338 (2004-01-01), Smith et al.
patent: 2007/0133358 (2007-06-01), Kubo et al.
patent: 2009/0108247 (2009-04-01), Takaura et al.
patent: WO 03/085675 (2003-10-01), None
patent: WO 2004/084228 (2004-09-01), None
patent: WO 2004/084229 (2004-09-01), None
patent: WO 2004084229 (2004-09-01), None
patent: WO 2004/090984 (2004-10-01), None

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