Resistance change memory device

Details Resistance change memory device Resistance change memory device

2007-06-12

2009-11-24

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000

Reexamination Certificate

active

07623370

ABSTRACT:
A resistance change memory device including a substrate, first and second wiring lines formed above the substrate to be insulated from each other, and memory cells disposed between the first and second wiring lines wherein the memory cell includes, a variable resistance element for storing as information a resistance value and a Schottky diode connected in series to the variable resistance element. The variable resistance element has a recording layer composed of a composite compound containing at least two types of cation elements, at least one type of the cation element being a transition element having “d”-orbit, in which electrons are incompletely filled, the shortest distance between adjacent cation elements being 0.32 nm or less.

REFERENCES:
patent: 3357004 (1967-12-01), Prohofsky et al.
patent: 4795657 (1989-01-01), Formigoni et al.
patent: 6141241 (2000-10-01), Ovshinsky et al.
patent: 6339544 (2002-01-01), Chiang et al.
patent: 6376284 (2002-04-01), Gonzalez et al.
patent: 6686631 (2004-02-01), King et al.
patent: 6815744 (2004-11-01), Beck et al.
patent: 2007/0133358 (2007-06-01), Kubo et al.
patent: 2008/0173916 (2008-07-01), Nishihara
patent: 2009/0073742 (2009-03-01), Katou
patent: 0 065 916 (1982-12-01), None
patent: 0 495 494 (1992-07-01), None
patent: WO 03/085675 (2003-10-01), None
patent: WO 2004/084228 (2004-09-01), None
patent: WO 2004/084229 (2004-09-01), None
patent: WO 2004/090984 (2004-10-01), None
U.S. Appl. No. 12/359,555, filed Jan. 26, 2009, Toda.
U.S. Appl. No. 12/403,845, filed Mar. 13, 2009, Toda.
U.S. Appl. No. 12/404,894, filed Mar. 16, 2009, Toda et al.
U.S. Appl. No. 10/257,029, filed Oct. 23, 2008, Toda.

Affiliated with

Also associated with

Rating

Resistance change memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Resistance change memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resistance change memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4083824