Resistance change memory device

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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C365S175000, C365S158000

Reexamination Certificate

active

08004873

ABSTRACT:
A resistance change memory device including a memory cell array with first wirings, second wirings, and memory cells, the memory cell including a diode and a variable resistance element, anode of diodes being located on the first wiring side, wherein the memory cell array is sequentially set in the following three states after power-on: a waiting state defined by that both the first and second wirings are set at a first voltage; a standby state defined by that the first wirings are kept at the first voltage and the second wirings are set at a second voltage higher than the first voltage; and an access state defined by that a selected first wiring and a selected second wiring are set at a third voltage higher than the first voltage and the first voltage, respectively.

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patent: 2010/0162068 (2010-06-01), Toda
patent: 2010/0235714 (2010-09-01), Toda
patent: 2011/0051492 (2011-03-01), Toda

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