Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2011-08-23
2011-08-23
Nguyen, Viet Q (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S175000, C365S158000
Reexamination Certificate
active
08004873
ABSTRACT:
A resistance change memory device including a memory cell array with first wirings, second wirings, and memory cells, the memory cell including a diode and a variable resistance element, anode of diodes being located on the first wiring side, wherein the memory cell array is sequentially set in the following three states after power-on: a waiting state defined by that both the first and second wirings are set at a first voltage; a standby state defined by that the first wirings are kept at the first voltage and the second wirings are set at a second voltage higher than the first voltage; and an access state defined by that a selected first wiring and a selected second wiring are set at a third voltage higher than the first voltage and the first voltage, respectively.
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Kabushiki Kaisha Toshiba
Nguyen Viet Q
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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