Resistance change memory, and data write and erase methods...

Details Resistance change memory, and data write and erase methods... Resistance change memory, and data write and erase methods...

2011-01-11

2011-01-11

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S158000, C365S189160

Reexamination Certificate

active

07869259

ABSTRACT:
A resistance change memory includes a first interconnection, a second interconnection, a first resistance change element which has a first electrode, a second electrode, and a first tunnel insulating film provided between the first electrode and the second electrode, the first tunnel insulating film including a first trap region formed by introducing defects to trap holes or electrons, and the second electrode being connected to the first interconnection, and a first transistor whose current path has one end connected to the first electrode and the other end connected to the second interconnection.

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patent: 7755932 (2010-07-01), Ito et al.
patent: 2004/0084714 (2004-05-01), Ishii et al.
Gibson A., et al., “Stability of vacancy defects in MgO: The role of charge neutrality,” Physical Review B vol. 50, No. 4, Jul. 15, 1994, pp. 2582-2592.

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