Resistance-change memory

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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Details

C365S207000, C365S210100, C365S230030

Reexamination Certificate

active

07952916

ABSTRACT:
A resistance-change memory includes first and second bit lines running in the same direction, a third bit line running parallel to the first and second bit lines, fourth and fifth bit lines running in the same direction, a sixth bit line running parallel to the fourth and fifth bit lines, a first memory element which has one and the other terminals connected to the first and third bit lines, and changes to one of first and second resistance states, a first reference element having one and the other terminals connected to the fourth and sixth bit lines, and set in the first resistance state, a second reference element having one and the other terminals connected to the fifth and sixth bit lines, and set in the second resistance state, and a sense amplifier having first and second input terminals connected to the first and fourth bit lines.

REFERENCES:
patent: 2003/0103402 (2003-06-01), Tran et al.
patent: 2006/0227598 (2006-10-01), Sakimura et al.
patent: 2007/0007536 (2007-01-01), Hidaka
patent: 2007/0268733 (2007-11-01), Ueda et al.
patent: 2009/0067212 (2009-03-01), Shimizu
Mark Durlam, et al., “A 1-Mbit MRAM Based on 1T1MTJ Bit Cell Integrated With Copper Interconnects,” IEEE Journal of Solid-state Circuits, vol. 35, No. 5, May 2003.

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