Resist removing method

Details Resist removing method Resist removing method

1993-12-28

1996-04-02

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Removal of imaged layers

430311, 430328, 430330, 134 1, 134902, 437 16, 437 20, G03F 742

Patent

active

055039642

ABSTRACT:
This resist removing method realizes efficient production of semiconductor devices and is configured to ensure both safe production and reliable semiconductor devices.
The present invention can be applied to a resist removing method used in combination with a high dose of ions injection process of applying a high dose of impurity ions to a semiconductor wafer onto which surface a far-ultraviolet-ray hardened resist is partially applied. That is, the present invention comprises a resist hardening step of evenly hardening the resist by treating it in a far-ultraviolet-ray irradiation process and a baking process before a high dose of ions injection process. Additionally, it comprises a resist ashing step of removing the resist by forcing the resist to react under the pressure of 2 through 5 Torr to O.sub.2 plasma excited by a microwave after the high dose of ions injection process.

REFERENCES:
patent: 4548688 (1985-10-01), Matthews
patent: 4826756 (1989-05-01), Orvek
patent: 4861732 (1989-08-01), Fujimura et al.
patent: 4938839 (1990-07-01), Fujimura et al.
patent: 5114529 (1992-05-01), Masuyama

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