Resist protect oxide structure of sub-micron salicide process

Details Resist protect oxide structure of sub-micron salicide process Resist protect oxide structure of sub-micron salicide process

2007-02-27

2007-02-27

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S300000, C438S763000, C438S950000, C257SE29309

Reexamination Certificate

active

10946406

ABSTRACT:
In accordance with the objectives of the invention a new method is provided for the creation of a layer of a Resistance Protective Oxide (RPO) layer. A layer of ONO is deposited that is to function as the layer of RPO. The deposited layer of ONO is patterned and wet etched, removing the upper or first layer of silicon dioxide. The patterned and etch upper of first layer of silicon dioxide is used as a hardmask to remove the central layer of silicon nitride applying a wet etch. A wet etch is then applied to remove the remaining lower of second layer of silicon dioxide, completing the patterning of the layer of RPO.

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