Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Post imaging radiant energy exposure
Patent
1994-08-25
1996-05-14
Bowers, Jr., Charles L.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Post imaging radiant energy exposure
430327, 430330, 430494, 430269, 437174, 437247, 437949, G03C 500, G03C 504, H01L 21306, H01L 21324
Patent
active
055166261
ABSTRACT:
The present invention relates to a resist processing device and resist processing method that enable resist pattern formation with a high degree of accuracy, and furthermore, enable in continuous dry etching, an isotropic etching possessing extremely high selectivity. The resist processing device is provided with at least a mechanism for the radiation of ultraviolet rays onto a substrate having a resist formed thereon, and a mechanism for the introduction of inert gas into the device. The resist processing method is characterized in that the radiation of ultraviolet rays onto a substrate which has a resist form thereon is conducted in an inert gas atmosphere.
REFERENCES:
patent: 3887440 (1975-06-01), Ichioka
patent: 4615776 (1986-10-01), Sasaki et al.
patent: 4765055 (1988-08-01), Ozaki et al.
patent: 4786947 (1988-11-01), Kosugi et al.
Horikoshi Motonobu
Nonaka Tohru
Ohmi Tadahiro
Onodera Masanobu
Bowers Jr. Charles L.
Ohmi Tadahiro
Pasterczyk J.
LandOfFree
Resist processing method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Resist processing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resist processing method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1894786