Resist pattern forming method, thin-film pattern forming...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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C430S324000, C430S325000

Reexamination Certificate

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07846646

ABSTRACT:
A resist pattern forming method comprises the steps of plasma-processing a surface of an acid-feedable resist layer formed and patterned on a surface of a substrate in a gas atmosphere containing a fluorocarbon; attaching a resin composition crosslinkable in the presence of an acid to the plasma-processed surface of the resist layer; crosslinking the resin composition in a part in contact with the resist layer by feeding an acid from the resist layer, so as to form a crosslinked layer covering the resist layer; and removing the resin composition from a part excluding the crosslinked layer, so as to yield a resist pattern comprising the resist layer and the crosslinked layer covering the resist layer.

REFERENCES:
patent: 6376157 (2002-04-01), Tanaka et al.
patent: 6416933 (2002-07-01), Singh et al.
patent: 6572917 (2003-06-01), Narisawa et al.
patent: 6933247 (2005-08-01), Byun et al.
patent: A 6-252040 (1994-09-01), None
patent: A 11-204399 (1999-07-01), None
patent: A 2004-247399 (2004-09-01), None

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