Resist pattern forming method and semiconductor device...

Details Resist pattern forming method and semiconductor device... Resist pattern forming method and semiconductor device...

2004-03-19

2008-09-30

Duda, Kathleen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

Reexamination Certificate

active

07429446

ABSTRACT:
A photoresist film12is formed on a substrate10. In the photoresist film12, an opening13having higher hydrophilicity and higher affinity with a chemical liquid16for swelling the photoresist film at upper part of the sidewall is formed down to the substrate10. The chemical liquid16is reacted with the photoresist film12with the opening formed in to swell the photoresist film16to thereby reverse-taper the sidewall of the opening. Whereby the photoresist film having an opening diameter beyond a resolution of the photoresist material and the sidewall of the opening reverse-tapered can be easily formed.

REFERENCES:
patent: 4654295 (1987-03-01), Yang et al.
patent: 6270929 (2001-08-01), Lyons et al.
patent: 07-153666 (1995-06-01), None
patent: 08-115923 (1996-05-01), None
patent: 10-073927 (1998-03-01), None
patent: 11-307549 (1999-11-01), None

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