Resist material and pattern formation method using the same

Details Resist material and pattern formation method using the same Resist material and pattern formation method using the same

2007-02-06

2008-11-25

Walke, Amanda C. (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S283100, C430S311000

Reexamination Certificate

active

07455950

ABSTRACT:
A resist material includes a polymeric material made of a unit represented by a general formula of the following Chemical Formula; and an acid generator for generating an acid through irradiation with light:wherein R1, R2and R3are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; m≧0, n≧0, s>0 (whereas excluding m=n=0) and 1≦k≦3.

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patent: 2005/0186501 (2005-08-01), Kishimura et al.
Lee, G., et al. “Origin of LER and Its Solution” Proceedings of SPIE, 2005, vol. 5753, pp. 390-399.

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