Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2007-01-09
2007-01-09
Walke, Amanda (Department: 1752)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S296000, C430S942000, C430S945000, C430S270100
Reexamination Certificate
active
10340987
ABSTRACT:
A scintillating structure for aligning an electron or ion beam using a detector while exposing a wafer, which may be a wafer or mask, is described. The structure is formed by a resist including a polymer with carboxylic acid groups, anhydride groups, and an acid-sensitive group, for instance tert.-butylester; a photoreactive compound which releases an acid upon irradiation with UV light, electrons, or ions; a solvent; and at least one scintillating substance such as anthracene, naphthaline and/or 1,4-bis-(5-phenyl-2-oxazolyl)-benzol. After a developing and silylating step, the cross-linked structure is inert with respect to solvents of additional resists that are applied over the structure. The scintillating structure is thus not dissolved, which improves the quality of online controlled electron or ion beam writing.
REFERENCES:
patent: 5229254 (1993-07-01), Lohaus et al.
patent: 5262283 (1993-11-01), Sezi et al.
patent: 5851733 (1998-12-01), Sezi et al.
patent: 5892230 (1999-04-01), Goodberlet et al.
patent: 6171755 (2001-01-01), Elian et al.
patent: 6210856 (2001-04-01), Lin et al.
patent: 6251558 (2001-06-01), Elian et al.
patent: 6432608 (2002-08-01), Fujie et al.
patent: 6506535 (2003-01-01), Mizutani et al.
patent: 6716573 (2004-04-01), Fujie et al.
patent: 97/34201 (1997-09-01), None
Stefan Hien et al.: “Dual-Wavelength Photoresist for Sub-200 nm Lithography”,SPIE 1998, vol. 3333, pp. 154-164.
Hien, S. et al.: “Thin Film Imaging with CARL© Photoresist at the Optical Resolution Limit”, Proc. SPIE, vol. 3333, 1998, pp. 154-164.
Elian, K. et al.: “Sub Quarter-Micron Bilayer Electron Beam Resist with Enhanced Sensitivity”, Elsevier Microelectronic Engineering 45, 1999, pp. 319-327.
Goodberlet, J. et al.: “Scintillating Global-Fiducial Grid for Electron-Beam Lithography”, J. Vac. Sci. Technol. B16(6), Nov./Dec. 1998, pp. 3672-3675.
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
Stemer Werner H.
Walke Amanda
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