Resist feature and removable spacer pitch doubling...

Details Resist feature and removable spacer pitch doubling... Resist feature and removable spacer pitch doubling...

2008-12-31

2011-12-27

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S257000, C438S262000, C438S587000, C438S637000, C438S642000, C257SE21038

Reexamination Certificate

active

08084347

ABSTRACT:
A method of making a semiconductor device includes forming at least one layer over a substrate, forming at least two spaced apart features of imagable material over the at least one layer, forming sidewall spacers on the at least two features and filling a space between a first sidewall spacer on a first feature and a second sidewall spacer on a second feature with a filler feature. The method also includes selectively removing the sidewall spacers to leave the first feature, the filler feature and the second feature spaced apart from each other, and etching the at least one layer using the first feature, the filler feature and the second feature as a mask.

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