Resist exposure system and method of forming a pattern on a...

Details Resist exposure system and method of forming a pattern on a... Resist exposure system and method of forming a pattern on a...

2008-07-22

2008-07-22

Walke, Amanda C. (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S270100, C430S313000, C430S330000, C430S905000, C430S907000, C430S910000, C430S945000

Reexamination Certificate

active

11360642

ABSTRACT:
A resist exposure system and a method of forming a pattern on a resist are provided and include an exposure source, a photoresist composition, and a mask positioned therebetween. The resist composition comprises a first photoresist X and a second photoresist Y. The first photoresist X absorbs at a higher wavelength than the second photoresist Y. The second photoresist Y has a lower glass transitional temperature than the first photoresist X.

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T.S. Ravi, K. Konjuh, D. Mordo, K. MacWilliams, W.G.M Van Den Hoek, “PEARL(TM)-PECVD Anti-Reflective Layer for Sub 0.35 μm Lithography,” Technical Paper, Novellus Systems, Inc., Dec. 1997.

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