Resist developer saving system using material to reduce surface

Details Resist developer saving system using material to reduce surface Resist developer saving system using material to reduce surface

2000-01-31

2000-10-24

Le, Hoa Van

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Processing feature prior to imaging

430423, G03F 732

Patent

active

061365149

ABSTRACT:
In one embodiment, the present invention relates to a method of processing a semiconductor structure including a resist thereon, involving the steps of exposing the semiconductor structure including the resist to actinic radiation; contacting the semiconductor structure including the exposed resist with a solution comprising water and from about 0.01% to about 5% by weight of a surfactant; and developing the resist with a developer.

REFERENCES:
patent: 4610953 (1986-09-01), Hashimoto et al.
patent: 4670372 (1987-06-01), Lewis et al.
patent: 4710449 (1987-12-01), Lewis et al.
patent: 5206107 (1993-04-01), Pearlstine
patent: 5254427 (1993-10-01), Lane et al.
patent: 5849467 (1998-12-01), Sato et al.
patent: 6007970 (1999-12-01), Ohmi et al.

Affiliated with

Also associated with

Rating

Resist developer saving system using material to reduce surface does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Resist developer saving system using material to reduce surface , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resist developer saving system using material to reduce surface will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1961979