Resist compositions and process for the formation of resist patt

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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4302831, 4302851, 4302871, 430325, 430330, G03C 500, G03C 1725

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058244522

ABSTRACT:
The negative-working resist composition which comprises a (meth)acrylate copolymer comprising (a) a vinyl monomer unit which contains in a side chain thereof at least one carbon--carbon double bond which does not concern itself with any polymerization reaction, but is able to be crosslinked with a crosslinking agent, (b) an acrylamide or methacrylamide monomer unit, (c) an acrylic acid or methacrylic acid monomer unit and (d) an acrylic acid or methacrylic acid adamantyl monomer unit as well as a crosslinking agent capable of being decomposed upon exposure to a patterning radiation and then causing crosslinking of said copolymer upon heating. The resist composition is particularly suitable for excimer laser lithography using an aqueous basic solution as a developer, and the formed resist patterns can exhibit a high sensitivity and excellent dry etch resistance without swelling.

REFERENCES:
patent: 4591626 (1986-05-01), Kawai et al.
patent: 5169740 (1992-12-01), Ushirogouchi et al.
patent: 5449731 (1995-09-01), Suzuki et al.

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