Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Patent
1997-05-01
1998-04-28
Chu, John S.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
430176, 430179, 430191, 430910, G03F 70004, G03F 7039
Patent
active
057442819
ABSTRACT:
A resist composition for forming a pattern, which comprises (a) a compound represented by the following formula (1) and satisfying the following inequalities, ##STR1## wherein R.sup.1 is hydrogen atom or methyl group, R.sup.2 is a monovalent organic group, m is 0 or a positive integer, n is a positive integer, and m and n satisfying a condition of 0.03.ltoreq.n/(m+n).ltoreq.1, (b) a compound capable of generating an acid when irradiated with light, and (c) 4-phenylpyridine, wherein a weight-average molecular weight, Mw and a number-average molecular weight, Mn satisfy the following inequality, 4,000.ltoreq.Mw.ltoreq.50,000, 1.10.ltoreq.Mw/Mn.ltoreq.2.50 (Mw and Mn respectively represent value converted in styrene).
REFERENCES:
patent: 4491628 (1985-01-01), Ito et al.
patent: 5100768 (1992-03-01), Niki et al.
patent: 5130392 (1992-07-01), Schwalm et al.
patent: 5403695 (1995-04-01), Hayase et al.
patent: 5556734 (1996-09-01), Yamachika et al.
patent: 5580695 (1996-12-01), Murata et al.
patent: 5658706 (1997-08-01), Niki et al.
patent: 5679495 (1997-10-01), Yamachika et al.
Chiba Kenji
Hayase Rumiko
Hayashi Takao
Niki Hirokazu
Onishi Yasunobu
Chu John S.
Kabushiki Kaisha Toshiba
LandOfFree
Resist composition for forming a pattern and method of forming a does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Resist composition for forming a pattern and method of forming a, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resist composition for forming a pattern and method of forming a will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1530827