Resist composition and patterning process using the same

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

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C430S311000, C430S319000, C430S325000, C430S326000, C430S905000, C430S910000, C430S914000, C430S921000, C430S925000

Reexamination Certificate

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07459261

ABSTRACT:
There is disclosed a resist composition which comprises, at least, a polymer in which a sulfonium salt having a polymerizable unsaturated bond, a (meth)acrylate having a lactone or a hydroxyl group as an adhesion group, and a (meth)acrylate having an ester substituted with an acid labile group are copolymerized. There can be provided a resist composition with high resolution which has high sensitivity and high resolution to high energy beam, especially to ArF excimer laser, F2excimer laser, EUV, X-ray, EB, etc., has reduced line edge roughness, and comprises a polymeric acid generator which has insolubility in water, and sufficient thermal stability and preservation stability.

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patent: 2002/0182541 (2002-12-01), Gonsalves
patent: 2005/0014090 (2005-01-01), Hirayama et al.
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Dammel et al; “193 nm Immersion Lithograph—Taking the Plunge”; Journal of Photopolymer Science and Technology; vol. 17; No. 4 (2004); pp. 587-601.
Gonsalves et al.; “High Resolution Resists for Next Generation Lithography: The Nanocomposite Approach”; Mat. Res. Sco. Symp. Prov.; vol. 636; 2001 Materials Research Society; 12 pp.

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