Resist composition and patterning process

Details Resist composition and patterning process Resist composition and patterning process

2006-11-06

2009-11-17

Lee, Sin J. (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S905000, C430S907000, C430S326000, C430S330000

Reexamination Certificate

active

07618763

ABSTRACT:
A hydroxystyrene/indene/alkoxyisobutoxystyrene copolymer having Mw of 1,000-500,000 is formulated as a base resin to give a resist composition, typically chemically amplified positive resist composition. The composition exhibits a high resolution, a satisfactory resist pattern profile after development, and improved etch resistance and is thus suitable as a micropatterning material for the fabrication of VLSI.

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Machine-assisted English translation of JP2004-348014 (Takeda et al), provided by JPO.
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