Resist composition and patterning process

Details Resist composition and patterning process Resist composition and patterning process

2011-07-12

2011-07-12

Kelly, Cynthia H (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S322000, C430S326000

Reexamination Certificate

active

07977027

ABSTRACT:
A chemically amplified positive resist composition comprises a compound having an amine oxide structure as a basic component, a base resin, a photoacid generator, and an organic solvent. The resist composition exhibits a high resolution, significantly prevents a line pattern from collapsing after development, and has improved etch resistance.

REFERENCES:
patent: 4279993 (1981-07-01), Magers et al.
patent: 4491628 (1985-01-01), Ito et al.
patent: 4511641 (1985-04-01), Busman et al.
patent: 5310619 (1994-05-01), Crivello et al.
patent: 5525453 (1996-06-01), Przybilla et al.
patent: 5529886 (1996-06-01), Eichhorn et al.
patent: 5576143 (1996-11-01), Aoai et al.
patent: 5580695 (1996-12-01), Murata et al.
patent: 5612169 (1997-03-01), Eichhorn et al.
patent: 5639880 (1997-06-01), Muller et al.
patent: 5691100 (1997-11-01), Kudo et al.
patent: 5714625 (1998-02-01), Hada et al.
patent: 5744281 (1998-04-01), Niki et al.
patent: 5843319 (1998-12-01), Przybilla et al.
patent: 6004724 (1999-12-01), Yamato et al.
patent: 6063953 (2000-05-01), Hada et al.
patent: 6080714 (2000-06-01), Overkempe et al.
patent: 6261738 (2001-07-01), Asakura et al.
patent: 6512020 (2003-01-01), Asakura et al.
patent: 6703181 (2004-03-01), Hayashi et al.
patent: 6887646 (2005-05-01), Fujiwara et al.
patent: 7166414 (2007-01-01), Thackeray et al.
patent: 2002/0061463 (2002-05-01), Nishi et al.
patent: 2004/0106063 (2004-06-01), Hatakeyama et al.
patent: 2005/0014092 (2005-01-01), Hasegawa et al.
patent: 2005/0244746 (2005-11-01), Makino et al.
patent: 2009/0004608 (2009-01-01), Sawada et al.
patent: 2010/0009299 (2010-01-01), Watanabe et al.
patent: 63-27829 (1988-02-01), None
patent: 63-27829 (1990-01-01), None
patent: 5-159239 (1993-06-01), None
patent: 5-232706 (1993-09-01), None
patent: 5-249662 (1993-09-01), None
patent: 5-249683 (1993-09-01), None
patent: 5-257282 (1993-10-01), None
patent: 5-289322 (1993-11-01), None
patent: 5-289340 (1993-11-01), None
patent: 6-194834 (1994-07-01), None
patent: 6-242605 (1994-09-01), None
patent: 6-242606 (1994-09-01), None
patent: 6-263716 (1994-09-01), None
patent: 6-263717 (1994-09-01), None
patent: 6-266100 (1994-09-01), None
patent: 6-266111 (1994-09-01), None
patent: 7-92678 (1995-04-01), None
patent: 7-92680 (1995-04-01), None
patent: 7-92681 (1995-04-01), None
patent: 7-120929 (1995-05-01), None
patent: 7-128859 (1995-05-01), None
patent: 7-134419 (1995-05-01), None
patent: 9-95479 (1997-04-01), None
patent: 9-280554 (1997-08-01), None
patent: 9-230588 (1997-09-01), None
patent: 2000-275836 (2000-10-01), None
patent: 2000-314956 (2000-11-01), None
patent: 2002-328471 (2002-11-01), None
patent: 2005-154386 (2005-06-01), None
patent: WO 2007/080726 (2007-07-01), None
W. Hinsberg et al.; “Fundamental Studies of Airborne Chemical Contamination of Chemically Amplified Resists”, Journal of Photopolymer Science and Technology, vol. 6, No. 4, pp. 535-546, 1993.
T. Kumada et al.; “Study on Over-Top Coating of Positive Chemical Amplification Resists for KrF Excimer Laser Lithography”; Journal of Photopolymer Science and Technology, vol. 6, No. 4, pp. 571-574, 1993.
J. Hatakeyama et al.; “Investigation of Discrimination Enhancement with New Modeling for Poly-Hydroxystyrene Positive Resists”; Journal of Photopolymer Science and Technology, vol. 13, No. 4, pp. 519-524, 2000.
Japanese Office Action dated Dec. 15, 2010, issued in corresponding Japanese Patent Application No. 2006-285753.

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