Resist application method and device

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S005000, C438S780000, C438S781000

Reexamination Certificate

active

07053008

ABSTRACT:
The resist application method comprises the steps of: thermal processing for evaporating water from the surface of a wafer10; making the surface of the wafer10hydrophobic with a hydrophobic processing material; and applying a resist onto the wafer10, and the step of thermal processing to the step of making the surface of the wafer10hydrophobic are performed in a dehumidified atmosphere.

REFERENCES:
patent: 6332724 (2001-12-01), Yano et al.
patent: 6458208 (2002-10-01), Anai et al.
patent: 6569696 (2003-05-01), Suenaga et al.
patent: 2003/0017256 (2003-01-01), Shimane
patent: 2004/0026031 (2004-02-01), Smith
patent: 62-35264 (1987-07-01), None
patent: 4-99310 (1992-03-01), None
patent: 5-234866 (1993-09-01), None
patent: 5-315233 (1993-11-01), None
patent: 6-302507 (1994-10-01), None
patent: 10-256139 (1998-09-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Resist application method and device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Resist application method and device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resist application method and device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3577523

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.