Resin-sealed semiconductor device

Details Resin-sealed semiconductor device Resin-sealed semiconductor device

1991-09-27

1993-04-13

LaRoche, Eugene R.

Active solid-state devices (e.g., transistors, solid-state diode

Encapsulated

524609, 523443, 257788, 257789, 257793, 257795, H01L 2330, C08L 9100

Patent

active

052027538

ABSTRACT:
A resin-sealed semiconductor device, including a lead frame. A semiconductor chip is formed on the lead frame and is electrically connected with the lead frame. At least a part of the lead frame and the semiconductor chip are sealed with a theremosetting resin which includes a base resin, aluminum oxide and fused silica. Stress acting on the semiconductor chip is reduced because the thermal expansion coefficient of the thermosetting resin becomes low due to the fused silica. At the same time the thermal conductivity of the thermosetting resin is increased because of the aluminum oxide.

REFERENCES:
patent: 3492157 (1970-01-01), Shintaro Ito et al.
patent: 3751724 (1973-08-01), McGrath et al.
patent: 4282136 (1981-08-01), Hunt et al.
patent: 4337182 (1982-06-01), Needham
patent: 4965660 (1990-10-01), Ogihara et al.
patent: 5015675 (1991-05-01), Walles et al.

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