Resin-sealed power semiconductor device including substrate...

Details Resin-sealed power semiconductor device including substrate... Resin-sealed power semiconductor device including substrate...

2000-09-18

2001-11-06

Clark, Sheila V. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Lead frame

With structure for mounting semiconductor chip to lead frame

C257S676000, C257S666000, C257S691000, C257S724000

Reexamination Certificate

active

06313520

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a structure of a resin-sealed (resin-encapsulated) power semiconductor device.
2. Description of the Background Art
FIG. 10
is a vertical sectional view of a first prior art resin-sealed power semiconductor device shown as mounted to a final product. In
FIG. 10
, the reference character
1
P designates power semiconductor elements;
2
AP and
2
BP designate lead parts of a frame serving as electrodes;
3
P designates brazing materials for bonding the power semiconductor elements
1
P to an upper surface of a die pad
19
P of the frame;
4
P designates thin metal wires such as aluminum wires for connection between each of the electrodes
2
AP and
2
BP and each of the power semiconductor elements
1
P or between the power semiconductor elements
1
P; and
5
P designates a sealing resin.
For efficient diffusion of heat from the power semiconductor elements
1
P to their immediately underlying components, the thicknesses of the lead parts
2
AP and
2
BP of the frame and the die pad
19
P are made equal and yet possibly maximized.
Further, outer leads of the lead parts
2
AP and
2
BP serving as electrodes are formed into a shape mountable outside the sealing resin
5
P, and subjected to surface treatment such as solder plating at their predetermined portions.
After shipment, the resin-sealed power semiconductor device having the above-mentioned structure is incorporated into customer's device on the customer's premises by bonding a substrate
6
P including a control circuit for controlling the semiconductor device to the plated portions of the lead parts
2
AP and
2
BP of the semiconductor device with solder
7
P, as shown in FIG.
10
. The control circuit comprises a semiconductor element (IC)
9
P such as a microcomputer for controlling the power semiconductor elements
1
P, and electronic components
12
P such as a resistor and a capacitor.
FIG. 11
is a vertical sectional view of a second prior art resin-sealed power semiconductor device. The device of
FIG. 11
differs from the device of
FIG. 10
in that the device of
FIG. 11
itself contains the semiconductor element (IC)
9
P such as a microcomputer shown in
FIG. 10
, the element
9
P being mounted on an inner lead of the lead frame
2
BP. For customer's use of the power semiconductor device, it is also necessary to bond the control substrate
6
P with all of the electronic components
12
P for the control circuit mounted thereon to an outer lead tip of the power semiconductor device of
FIG. 11
by soldering, as shown in
FIG. 10
, on the customer's premises.
(1) The first and second prior art power semiconductor devices described above present a problem such that a long path from the power semiconductor elements
1
P to the electronic components
12
P provided on the control substrate
6
P for controlling the power semiconductor elements
1
P decreases noise immunity.
(2) In the first and second prior art practices, the thicknesses of the lead parts and the die pad are made equal and yet as great as possible, as above described, for the purpose of efficiently diffusing heat generated by the power semiconductor elements
1
P. To solve the above-mentioned problem (1), it is desirable that all of the multiplicity of electronic components
12
P constituting the control circuit of the power semiconductor elements
1
P, together with the semiconductor element (IC)
9
P in the control circuit, are mounted on the inner leads of the lead parts. However, such an attempt to contain all of the components of the control circuit in the sealing resin inevitably results in a hyperfine inner lead pattern, thereby to significantly decrease a pitch between adjacent inner leads. As a result, another problem is encountered such that it is quite difficult to form such a hyperfine pattern of the inner leads which are made as thick as possible by press working, etching or the like. With increasing functionality of the power semiconductor device, the number of electronic components constituting the control circuit contributing to the increase in functionality is on the increase, and the scale of the control circuit is accordingly increasing. This requires a much finer inner lead pattern, to make the problem more serious.
SUMMARY OF THE INVENTION
According to a first aspect of the present invention, a resin-sealed power semiconductor device comprises: a frame part comprising a lead part having a plurality of inner leads and a plurality of outer leads continuous respectively with the plurality of inner leads, and a die pad equal in thickness to the lead part; a power semiconductor element mounted on a portion of the die pad; a substrate bonded onto a support of the frame part except the portion of the die pad; a pattern of a control circuit of the power semiconductor element, the control circuit pattern being formed on at least a first main surface of the substrate; a semiconductor element mounted on the control circuit pattern for controlling the power semiconductor element; electronic components all mounted on the control circuit pattern and constituting the control circuit in conjunction with the semiconductor element; and a sealing resin for sealing therein the plurality of inner leads, the die pad, the power semiconductor element, the substrate, the semiconductor element and all of the electronic components.
Preferably, according to a second aspect of the present invention, in the resin-sealed power semiconductor device of the first aspect, the support of the frame part comprises at least two supporting inner leads among the plurality of inner leads.
Preferably, according to a third aspect of the present invention, in the resin-sealed power semiconductor device of the second aspect, the substrate is a ceramic substrate; and the control circuit pattern is a thick film pattern.
Preferably, according to a fourth aspect of the present invention, in the resin-sealed power semiconductor device of the second aspect, the substrate is a glass epoxy substrate.
Preferably, according to a fifth aspect of the present invention, in the resin-sealed power semiconductor device of the second aspect, the substrate comprises a plurality of through hole parts equal in number to the at least two supporting inner leads; a conducting pattern is provided for each of the through hole parts and formed on a wall surface of each of the through hole parts and on portions of the first main surface and a second main surface of the substrate which surround each of the through hole parts; and a portion of the conducting pattern on the second main surface is bonded with a conductive bonding layer to an associated one of the at least two supporting inner leads.
Preferably, according to a sixth aspect of the present invention, in the resin-sealed power semiconductor device of the fifth aspect, the substrate is a glass epoxy substrate.
Preferably, according to a seventh aspect of the present invention, in the resin-sealed power semiconductor device of the second aspect, the support comprises supporting inner leads adjacent to each other.
Preferably, according to an eighth aspect of the present invention, in the resin-sealed power semiconductor device of the first aspect, the support of the frame part corresponds to another portion of the die pad.
Preferably, according to a ninth aspect of the present invention, in the resin-sealed power semiconductor device of the first aspect, the support of the frame part comprises first and second supporting inner leads among the plurality of inner leads. At least one intermediate inner lead among the plurality of inner leads which is present between the first and second supporting inner leads is shorter than the first and second supporting inner leads. The substrate includes a first end portion supported by the first supporting inner lead, with a bonding layer therebetween, a second end portion opposite from the first end portion and supported by the second supporting inner lead, with the bonding layer therebetween, and third an

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