Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
Reexamination Certificate
2011-08-16
2011-08-16
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With electrical contact in hole in semiconductor
C257S698000, C257S774000, C257S781000, C257SE23011
Reexamination Certificate
active
07999354
ABSTRACT:
A resin composition of the present invention is used for forming a filling material which fills at least a through-hole of a semiconductor substrate, the through-hole extending through the semiconductor substrate in a thickness direction thereof and having a conductive portion therein. The resin composition is composed of: a resin having a radical-polymerizable double bond, a thermosetting resin and a resin which differs from the resin having the radical-polymerizable double bond and has an alkali-soluble group and a double bond; or a cyclic olefin resin. A filling material of the present invention is formed of a cured product of the above resin composition. An insulating layer of the present invention is formed of a cured product of the above resin composition. The insulating layer includes: a layer-shaped insulating portion provided on a surface opposite to a functional surface of the semiconductor substrate; and a filling portion integrally formed with the insulating portion and filling the through-hole. A semiconductor device of the present invention includes the above insulating layer.
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International Search Report for International Application No. PCT/JP2008/060713 mailed Jul. 22, 2008.
Dejima Hirohisa
Kusunoki Junya
Takahashi Toyosei
Takayama Rie
Ho Tu-Tu V
Smith , Gambrell & Russell, LLP
Sumitomo Bakelite Company Ltd.
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