Reset circuit and FeRAM using the same

Details Reset circuit and FeRAM using the same Reset circuit and FeRAM using the same

2005-03-22

2005-03-22

Le, Thong Q. (Department: 2818)

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

C365S189090

Reexamination Certificate

active

06870779

ABSTRACT:
A reset signal generating circuit and a nonvolatile ferroelectric memory device using the same are disclosed. The reset signal generating circuit generates a reset signal by using a self-bias circuit regardless of a slope time of a power voltage only when the power voltage rises beyond a predetermined voltage. As a result, the reset signal generating circuit may generate a stable reset signal having excellent operation characteristics at short intervals even when the supply of the power source is repeatedly intercepted. Additionally, the reset signal generation circuit may stabilize generation of control signals for controlling a nonvolatile FeRAM, thereby improving the operation characteristics of the memory device.

REFERENCES:
patent: 5305269 (1994-04-01), Vinal
patent: 5376835 (1994-12-01), Van Buskirk et al.
patent: 5508649 (1996-04-01), Shay
patent: 5519347 (1996-05-01), Kim
patent: 5610542 (1997-03-01), Kang et al.
patent: 5617062 (1997-04-01), O'Shaughnessy et al.

Affiliated with

Also associated with

Rating

Reset circuit and FeRAM using the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reset circuit and FeRAM using the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reset circuit and FeRAM using the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3388762