Reprogrammable nonvolatile memory devices and methods

Details Reprogrammable nonvolatile memory devices and methods Reprogrammable nonvolatile memory devices and methods

2009-05-15

2010-10-26

Phan, Trong (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185250, C365S185330

Reexamination Certificate

active

07821837

ABSTRACT:
A nonvolatile memory device includes a command decoder configured to generate a read/write flag signal in response to a read/write command and to generate a reprogram flag signal in response to a reprogram command, and a read/write circuit configured to control reading and writing operations in a memory cell array. The device further includes a read/write controller configured to cause the read/write circuit to perform a reading/writing operation in response to the read/write flag signal provided from the command decoder, and a reprogram controller configured to cause the read/write controller to perform a reprogramming operation in response to the reprogram flag signal. Methods of reprogramming a memory device include determining whether the memory device is in a busy state, delaying a reprogramming operation if the memory device is in a busy state, and executing the reprogramming operation when the memory device has turned to a standby state from the busy state.

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