Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2004-10-27
2008-03-18
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S695000, C438S780000, C257SE21029, C257SE21091, C257SE21109, C257SE21134
Reexamination Certificate
active
07345002
ABSTRACT:
A method for the duplication of microscopic patterns from a master to a substrate is disclosed, in which a replica of a topographic structure on a master is formed and transferred when needed onto a receiving substrate using one of a variety of printing or imprint techniques, and then dissolved. Additional processing steps can also be carried out using the replica before transfer, including the formation of nanostructures, microdevices, or portions thereof. These structures are then also transferred onto the substrate when the replica is transferred, and remain on the substrate when the replica is dissolved. This is a technique that can be applied as a complementary process or a replacement for various lithographic processing steps in the fabrication of integrated circuits and other microdevices.
REFERENCES:
patent: 5629579 (1997-05-01), Zimmerman
patent: 6518194 (2003-02-01), Winningham et al.
patent: 6656568 (2003-12-01), Winningham et al.
patent: 6744909 (2004-06-01), Kostrzewski et al.
patent: 7125639 (2006-10-01), Schaper
Nhu David
The Board of Trustees of the Leland Stanford Junior University
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