Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-02-28
2006-02-28
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S677000, C438S788000, C438S781000, C438S694000, C438S692000, C257S783000, C428S195100, C428S328000, C428S448000, C430S311000
Reexamination Certificate
active
07005390
ABSTRACT:
Processing problems associated with porous low-k dielectric materials are often severe. Exposure of low-k materials to plasma during feature etching, ashing, and priming steps has deleterious consequences. For porous, silicon-based low-k dielectric materials, the plasma depletes a surface organic group, raising the dielectric constant of the material. In the worst case, the damaged dielectric is destroyed during the wet etch removal of the antireflective coating in the via-first copper dual-damascene integration scheme. This issue is addressed by exposing the dielectric to silane coupling agents at various stages of etching and cleaning. Chemical reactions with the silane coupling agent both replenish the dielectric surface organic group and passivate the dielectric surface relative to the surface of the antireflective coating.
REFERENCES:
patent: 4778727 (1988-10-01), Tesoro et al.
patent: 4950583 (1990-08-01), Brewer et al.
patent: 5078091 (1992-01-01), Stewart
patent: 5527621 (1996-06-01), Matsuura et al.
patent: 5760480 (1998-06-01), You et al.
patent: 6103624 (2000-08-01), Nogami et al.
patent: 6166439 (2000-12-01), Cox
patent: 6383466 (2002-05-01), Domansky et al.
patent: 6455443 (2002-09-01), Eckert et al.
patent: 6503840 (2003-01-01), Catabay et al.
patent: 6506675 (2003-01-01), Oomiya et al.
patent: 6566283 (2003-05-01), Pangrle et al.
patent: 6762127 (2004-07-01), Boiteux et al.
patent: 6800940 (2004-10-01), Catabay et al.
patent: 2002/0192600 (2002-12-01), Okamura et al.
patent: 2003/0068489 (2003-04-01), Ohata
patent: 2003/0134495 (2003-07-01), Gates et al.
patent: 2004/0013858 (2004-01-01), Hacker et al.
patent: 2004/0018748 (2004-01-01), Lu et al.
“Improving Adhesion of Carbon Doped Oxides by Silanization”, U.S. Appl. No. 10/209,700, filed Aug. 1, 2002, 35 Pgs.
Britcher, et al., “Direct Spectroscopic Measurements of Adsorption of Siloxane Polymers Onto Glass Fiber Surfaces”, Silanes and other Coupling Agents, vol. 2, pp. 99-114, 2000.
Knapp, et al., “Preparation, Comparison and Performance of Hydrophobic AFM Tips”, Surface and Interface Analysis 27, pp. 324-331, 1999.
Plueddemann, “Silane Coupling Agents”, Intel Corporation, Employee Resource Center, Santa Clara, CA ., Copyright 1982, Plenum Press, NY, pp. 73-109, 111-139, 207-232.
“Tailoring Surfaces with Silanes”, Chemtech, Dec. 1977, pp. 766-778.
Gracias David H.
RamachandraRao Vijayakumar S.
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Keshavan Belur V
Smith Matthew
LandOfFree
Replenishment of surface carbon and surface passivation of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Replenishment of surface carbon and surface passivation of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Replenishment of surface carbon and surface passivation of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3706450