Replacement metal gate transistor with metal-rich silicon...

Details Replacement metal gate transistor with metal-rich silicon... Replacement metal gate transistor with metal-rich silicon...

2006-08-15

2006-08-15

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S182000, C438S183000, C257SE29158, C257SE21441

Reexamination Certificate

active

07091118

ABSTRACT:
A semiconductor device with a replacement metal gate and the process for making the same removes a dummy gate from a semiconductor device. Within the recess left by the dummy gate is a silicon layer on a gate dielectric layer. A replacement metal is deposited on the thin silicon layer and then reacted with the silicon layer to form a metal-rich silicon layer on the gate dielectric layer.

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