Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2010-10-20
2011-12-27
Richards, N Drew (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C257SE21182
Reexamination Certificate
active
08084346
ABSTRACT:
A method includes forming a dummy gate in a dielectric layer on a substrate, the dummy gate including a sacrificial oxide layer and a dummy gate body over the sacrificial oxide layer; removing the dummy gate body resulting in a gate opening with the sacrificial oxide layer in a bottom of the gate opening; performing an off-axis sputtering to create an angled entrance on the gate opening; removing the sacrificial oxide layer; and forming a replacement gate in the gate opening.
REFERENCES:
patent: 3943047 (1976-03-01), Cruzan et al.
patent: 5162261 (1992-11-01), Fuller et al.
patent: 5629237 (1997-05-01), Wang et al.
patent: 5750441 (1998-05-01), Figura et al.
patent: 6743683 (2004-06-01), Barns et al.
Guo Dechao
Hon Wong Keith Kwong
Wang Gan
Wang Yanfeng
Yuan Jun
Cai Yuanmin
Hoffman Warnick LLC
International Business Machines - Corporation
Richards N Drew
Shook Daniel
LandOfFree
Replacement metal gate method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Replacement metal gate method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Replacement metal gate method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4255450