Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2006-02-14
2006-02-14
Do, Thuan (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000, C716S030000, C716S030000
Reexamination Certificate
active
07000208
ABSTRACT:
Processing a chip layout (e.g. optical proximity correction (OPC) or verification) can be time consuming and require the use of expensive tools. Organizing the original layout using segments can minimize both of these resources. For example, shapes within a unit can be dissected into segments. Each segment can be compared to segments stored in a database. If the segment matches a listed segment, then the segment can be linked to the listed segment. Matching can be done by identifying corners within a neighborhood of each segment. If the segment and its neighborhood do not match those of a listed segment, then a new database entry can be created. Only representative segments are used to perform processing, thereby significantly improving resource allocation. The results from the representative segments can be copied to their respective linked segments, thereby ensuring accuracy of the processing.
REFERENCES:
patent: 5631110 (1997-05-01), Shioiri et al.
patent: 5682323 (1997-10-01), Pasch et al.
patent: 5723233 (1998-03-01), Garza et al.
patent: 5815685 (1998-09-01), Kamon
patent: 5825647 (1998-10-01), Tsudaka
patent: 5991006 (1999-11-01), Tsudaka
patent: 6014456 (2000-01-01), Tsudaka
patent: 6081658 (2000-06-01), Rieger et al.
patent: 6154563 (2000-11-01), Tsudaka
patent: 6243855 (2001-06-01), Kobayashi et al.
patent: 6249597 (2001-06-01), Tsudaka
patent: 6289499 (2001-09-01), Rieger et al.
patent: 6298473 (2001-10-01), Ono et al.
patent: 6453457 (2002-09-01), Pierrat et al.
patent: 6795955 (2004-09-01), MacLean et al.
patent: 2002/0100004 (2002-07-01), Pierrat et al.
patent: 2002/0148961 (2002-10-01), Nakasuji et al.
patent: 2003/0103189 (2003-06-01), Neureuther et al.
patent: 2004/0019872 (2004-01-01), Lippincott et al.
patent: 2.324169 (1998-10-01), None
patent: 3-80525 (1991-04-01), None
patent: WO 00/67074 (2000-11-01), None
Ackmann, P., et al., “Phase Shifting and Optical Proximity Corrections to Improve CD Control on Logic Devices in Manufacturing for Sub 0.35 μm I-Line”, SPIE, vol. 3051, pp. 146-153, Mar. 12-14, 1997.
Lithas, “Lithas: Optical Proximity Correction Software” (2 pages).
Precim, “Proxima System”, Precim Company, Portland, Oregon (2 pages).
Precim, “Proxima Wafer Proximity Correction System”, Precim Company, Portland, Oregon (2 pages).
Rieger, M., et al., “Mask Fabrication Rules for Proximity-Corrected Patterns”, Precim Company, Portland, Oregon (10 pages).
Rieger, M., et al., “Using Behavior Modeling for Proximity Correction”, Precim Company, Portland, Oregon (6 pages).
Cobb, et al., “Fast Sparse Aerial Image Calculation for OPC”, SPIE, vol. 2621, pp. 534-544, Sep. 20-22, 1995.
Lucas, K., et al., “Model Based OPC for 1st Generation 193nm Lithography”, Motorola Inc., IDT assignee to IMEC (12 pages).
Stirninan, J., et al., “Quantifying Proximity and Related Effects in Advanced Wafer Processes”, Precim Company, Hewlett Packard Labs (9 pages).
Sugawara, M., et al., “Practical Evaluation of Optical Proximity Effect Correction by EDM Methodology”, Sony Corporation (11 pages).
Saleh, B., et al., “Reduction of Errors Microphotographic Reproductions by Optimal Corrections of Original Masks”, Optical Engineering, vol. 20, No. 5, pp. 781-784, Sep./Oct. 1981.
Fu, C.C., et al., “Enhancement of Lithographic Patterns by Using Serif Features”, IEEE, Transactions On Electron Devices, vol. 38, No. 12, pp. 2599-2603, Dec. 1991.
Harafuji, K., et al., “A Novel Hierarchical Approach for Proximity Effect Correction in Electron Beam Lithography”, IEEE, vol. 12, No. 10, pp. 1508-1514, Oct. 1993.
Rieger, M., et al., “System for Lithography Proximity Compensation”, Precim Company, Portland, Oregon, Sep. 1993 (28 pages).
Stirniman, J., et al., “Fast Proximity Correction with Zone Sampling”, SPIE, vol. 2197, pp. 294-301 (1994).
Stirniman, J., et al., “Optimizing Proximity Correction for Wafer Fabrication Processes”, SPIE, Photomask Technology And Management, vol. 2322, pp. 239-246 (1994).
Stirniman, J., et al., “Wafer Proximity Correction and Its Impact on Mask-Making”, Racus News, vol. 10, Issue 1, pp. 1, 3-7, Jan. 10-12, 1994.
Henderson, R., et al., “Optical Proximity Effect Correction: An Emerging Technology”, Microlithography World, pp. 6-12 (1994.
Barouch, E., et al., “OPTIMASK: An OPC Algorithm for Chrome and Phase-Shift Mask Design”, SPIE, Vo. 2440, pp. 192-206, Feb. 1995.
Cobb, N., et al., “Fast, Low-Complexity Mask Designs”, SPIE, vol. 2440, pp. 313-327. Feb. 22-24, 1995.
Yen, A., et al., “Characterization and Correction of Optical Proximity Effects in Deep-Ultraviolet Lithography Using Behavior Modeling”, J. Vac. Sci. Technol. B. vol. 14, No. 6, pp. 4175-4178. Nov./Dec. 1996.
Morimoto, H., et al., “Next Generation Mask Strategy—Technologies are Ready for Mass Production of 256MDRAM?”, SPIE, vol. 3236, pp. 188-189 (1997).
Park, C., et al., “An Automatic Gate CD Control for a Full Chip Scale SRAM Device”, SPIE, vol. 3236, pp. 350-357 (1997).
Dolainsky, C., et al., “Application of a Simple Resist Model to Fast Optical Proximity Correction”, SPIE, vol. 3051, pp. 774-780 (1997).
Chuang, II., et al., “Practical Applications of 2-D Optical Proximity Corrections for Enhanced Performance of 0.25μm Random Logic Devices”, IEEE, pp. 18.7.1-18.7.4, Dec. 1997.
Cobb, N., et al., “Experimental Results on Optical Proximity Correction With Variable Threshold Resist Model”, SPIE, vol. 3051, pp. 458-468, Mar. 12-14, 1997.
Asai, N., et al., “Proposal for the Coma Aberration Dependent Overlay Error Compensation Technology”, Jpn. J. Appl. Phys., vol. 37, pp. 6718-6722 (1998).
Cobb, N., “Fast Optical and Process Proximity Correction Algorithms for Integrated Circuit Manufacturing”, Dissertation, University of California at Berkeley, UMI Microform 9902038 (139 pages).
Toublan, O., et al., “Phase Aware Proximity Correction for Advanced Masks”, SPIE, vol. 4000, pp. 160-170, Mar. 1-3, 2000.
Anonymous, “Parameterization For Full Shape And Rule Dependent Dissection”, IPCOM000009587D. Sep. 4, 2002 (9 pages).
Bever Hoffman & Harms LLP
Do Thuan
Harms Jeanette S.
Synopsys,Inc.
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