Repair of memory cells

Static information storage and retrieval – Read/write circuit – Bad bit

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S201000, C365S230030

Reexamination Certificate

active

11128697

ABSTRACT:
A memory device has at least one sub array of memory cells having data columns and at least one spare sub array having spare columns. In one embodiment the sub array of memory cells and the sub array having spare columns are the same sub array. Individual elements in the sub arrays of memory cells can be repaired using an individual element from the spare sub array.

REFERENCES:
patent: 5673227 (1997-09-01), Engles et al.
patent: 5926421 (1999-07-01), Choi
patent: 5953745 (1999-09-01), Lattimore et al.
patent: 6144593 (2000-11-01), Cowles et al.
patent: 6449199 (2002-09-01), Hidaka
patent: 6567322 (2003-05-01), Mukai et al.
patent: 6625072 (2003-09-01), Ohtani et al.
patent: 6882592 (2005-04-01), Noguchi et al.
patent: 2002/0024859 (2002-02-01), Ooishi
patent: 2002/0181303 (2002-12-01), Kato et al.
patent: 2004/0022110 (2004-02-01), Haraguchi et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Repair of memory cells does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Repair of memory cells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Repair of memory cells will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3946205

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.