Repair of dielectric-coated electrode or circuit defects

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S662000, C438S798000

Reexamination Certificate

active

06211080

ABSTRACT:

FIELD OF THE INVENTION
This invention relates to repair of metal line and, more particularly, to the repair or augmentation of metal line covered with a dielectric material using laser ablation.
BACKGROUND OF THE INVENTION
Metal lines are commonly used for connecting circuits and personal computer boards and multichip modules, among many other applications. In some of these applications, the metal lines are covered by a dielectric material. In such devices, defects or openings in the metal line are difficult to repair because access to the metal lines is hindered by the dielectric cover layer. Presently, when defects in the metal lines of such devices are discovered, the device is considered irreparable, and it is thrown away.
A technique for repairing such buried metal lines is desirable. Such a technique would reduce production costs and waste of devices incorporating buried metal lines.
SUMMARY OF THE INVENTION
The present invention provides a method and apparatus for repairing or augmenting a metal line buried beneath at least one cover layer by creating a via through the cover layer to the metal line, repairing or augmenting the metal line, and filling the via.
The invention also provides a substrate having a metal line buried beneath at least one cover layer wherein the metal line has been repaired or augmented according to the process of creating a via through the cover layer to the metal line, repairing or augmenting the metal line, and filling the via.


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