Static information storage and retrieval – Read/write circuit – Testing
Patent
1991-05-16
1993-11-09
Pascal, Robert J.
Static information storage and retrieval
Read/write circuit
Testing
365200, 371 103, G11C 700
Patent
active
052609073
ABSTRACT:
A repair circuit for integrated circuits adapted for selecting and repairing a storage cell having a fault, and a main fuse adapted for operating the repair circuit. The repair circuit comprises a plurality of p-channel MOSFETs and a plurality of fuses. A NAND gate has as inputs, an output signal from said repair circuit and a control signal. The control signal is generated as the address of the selected cell is varied. The control signal is a pulse which transits from a low lever to a high level and back to a low level again as the address is varied. The repair circuit reduces power consumption in integrated circuits by allowing current to flow therein only when the address of the selected cell is varied.
REFERENCES:
patent: 4689494 (1987-08-01), Chen et al.
patent: 4714839 (1987-12-01), Chung
patent: 4975881 (1990-12-01), Kagami
patent: 4987560 (1991-01-01), Hamano et al.
patent: 5058059 (1991-10-01), Matsuo et al.
patent: 5140554 (1992-08-01), Schreck et al.
Dinh Tan
Hyundai Electronics Industries Co,. Ltd.
Pascal Robert J.
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