Repair circuit

Details Repair circuit Repair circuit

2005-03-01

2005-03-01

Hoang, Huan (Department: 2818)

Static information storage and retrieval

Read/write circuit

Bad bit

C365S225700

Reexamination Certificate

active

06862231

ABSTRACT:
A repair circuit of a semiconductor memory device features a fuse box unit, a fuse stop unit and a repair control circuit unit. The fuse box unit outputs a first control signal to command a failed cell to be substituted with a spare cell when inputted address information is identical with address information programmed in a fuse. The fuse stop unit outputs a third control signal to command the spare cell to be substituted in response to the first control signal and a second control signal for representing if the spare cell is normal or not. The repair control circuit unit substitutes the failed cell with the spare cell in response to the third control signal. As a result, the repair circuit of the present invention substitutes a failed cell with a normal spare cell when a space cell is normal, without performing a repair operation when a spare cell fails.

REFERENCES:
patent: 5689464 (1997-11-01), Lee et al.
patent: 6026037 (2000-02-01), Hong
patent: 6191984 (2001-02-01), Noh
patent: 6205064 (2001-03-01), Ooishi
patent: 6504769 (2003-01-01), Do et al.
patent: 20020136070 (2002-09-01), Arikl

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