Repair and restoration of damaged dielectric materials and...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C438S099000, C438S780000, C438S789000, C438S790000

Reexamination Certificate

active

07915181

ABSTRACT:
Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.

REFERENCES:
patent: 4567221 (1986-01-01), Maruyama et al.
patent: 4624739 (1986-11-01), Nixon et al.
patent: 4654269 (1987-03-01), Lehrer
patent: 5079300 (1992-01-01), Dubrow et al.
patent: 5271777 (1993-12-01), Duffy
patent: 5372851 (1994-12-01), Ogawa et al.
patent: 5429730 (1995-07-01), Nakamura et al.
patent: 5479727 (1996-01-01), Fine et al.
patent: 5576247 (1996-11-01), Yano et al.
patent: 5609629 (1997-03-01), Fearnot et al.
patent: 5686549 (1997-11-01), Grainger et al.
patent: 5750610 (1998-05-01), Burns et al.
patent: 5915175 (1999-06-01), Wise
patent: 6037275 (2000-03-01), Wu et al.
patent: 6042994 (2000-03-01), Yang et al.
patent: 6090724 (2000-07-01), Shelton et al.
patent: 6096070 (2000-08-01), Ragheb et al.
patent: 6177143 (2001-01-01), Treadwell et al.
patent: 6208014 (2001-03-01), Wu et al.
patent: 6255230 (2001-07-01), Ikakura et al.
patent: 6258972 (2001-07-01), Nakaoka et al.
patent: 6318124 (2001-11-01), Rutherford et al.
patent: 6346490 (2002-02-01), Catabay et al.
patent: 6395651 (2002-05-01), Smith et al.
patent: 6410149 (2002-06-01), Hendricks et al.
patent: 6420193 (2002-07-01), Martin
patent: 6441489 (2002-08-01), Motoyama
patent: 6448331 (2002-09-01), Ioka et al.
patent: 6451512 (2002-09-01), Rangarajan
patent: 6479374 (2002-11-01), Ioka et al.
patent: 6495906 (2002-12-01), Smith et al.
patent: 6508920 (2003-01-01), Ritzdorf et al.
patent: 6518205 (2003-02-01), Wu et al.
patent: 6521547 (2003-02-01), Chang et al.
patent: 6537919 (2003-03-01), Wang
patent: 6566283 (2003-05-01), Pangrle et al.
patent: 6573147 (2003-06-01), Moon et al.
patent: 6583067 (2003-06-01), Chang et al.
patent: 6589889 (2003-07-01), Endisch et al.
patent: 6607925 (2003-08-01), Kim et al.
patent: 6713382 (2004-03-01), Pangrle et al.
patent: 6743737 (2004-06-01), Yau et al.
patent: 6762066 (2004-07-01), Holz
patent: 6770572 (2004-08-01), Wu et al.
patent: 6821880 (2004-11-01), Tao et al.
patent: 7029826 (2006-04-01), Hacker et al.
patent: 2002/0001973 (2002-01-01), Wu et al.
patent: 2002/0168876 (2002-11-01), Endisch et al.
patent: 2003/0003765 (2003-01-01), Gibson et al.
patent: 2003/0013211 (2003-01-01), Hu et al.
patent: 2003/0198895 (2003-10-01), Toma et al.
patent: 2004/0013858 (2004-01-01), Hacker et al.
patent: 2004/0072436 (2004-04-01), RamachandraRao et al.
patent: 2004/0079632 (2004-04-01), Ahmad et al.
patent: 2004/0096593 (2004-05-01), Lukas et al.
patent: 2004/0096672 (2004-05-01), Lukas et al.
patent: 2004/0152296 (2004-08-01), Matz et al.
patent: 2004/0224095 (2004-11-01), Miller
patent: 2004/0224512 (2004-11-01), Sato et al.
patent: 2005/0017365 (2005-01-01), RamachandraRao et al.
patent: 2005/0032293 (2005-02-01), Clark et al.
patent: 2005/0077597 (2005-04-01), Toma et al.
patent: 2005/0095840 (2005-05-01), Bhanap et al.
patent: 2005/0106384 (2005-05-01), Sambasivan et al.
patent: 2005/0106762 (2005-05-01), Chakrapani et al.
patent: 2005/0158884 (2005-07-01), Gaynor
patent: 2005/0173803 (2005-08-01), Lu et al.
patent: 2005/0215072 (2005-09-01), Kevwitch et al.
patent: 2005/0229947 (2005-10-01), Spiegelman et al.
patent: 2005/0233583 (2005-10-01), Miyajima
patent: 2005/0282401 (2005-12-01), Davis
patent: 2006/0057837 (2006-03-01), Bhanap et al.
patent: 2006/0057855 (2006-03-01), Ramos et al.
patent: 2006/0141641 (2006-06-01), Fan et al.
patent: 1345464 (2002-04-01), None
patent: 10130824 (2002-10-01), None
patent: 0643421 (1995-03-01), None
patent: 0688052 (1995-12-01), None
patent: 0775669 (1997-05-01), None
patent: 0 849 796 (1998-06-01), None
patent: 0997497 (2004-10-01), None
patent: H05-161844 (1993-06-01), None
patent: 06-067408 (1994-03-01), None
patent: 07-335758 (1995-12-01), None
patent: 09-099056 (1997-04-01), None
patent: 09-106983 (1997-04-01), None
patent: 09-237833 (1997-09-01), None
patent: 2000-277520 (2000-06-01), None
patent: 2002-353308 (2002-06-01), None
patent: 2001-0001970 (2002-04-01), None
patent: 2089499 (1997-09-01), None
patent: 483099 (2002-04-01), None
patent: 495880 (2002-07-01), None
patent: WO 9738355 (1997-10-01), None
patent: WO 99/03926 (1999-01-01), None
patent: WO 99/52136 (1999-10-01), None
patent: WO 00/44036 (2000-07-01), None
patent: WO 02/01621 (2002-01-01), None
patent: WO 0201621 (2002-01-01), None
patent: WO 03/077296 (2003-09-01), None
patent: WO 2004068555 (2004-08-01), None
patent: WO 2005/010972 (2005-02-01), None
patent: WO 2005/034194 (2005-04-01), None
patent: WO 2005/038863 (2005-04-01), None
Patent Abstracts of Japan, vol. 2003, No. 9, Sep. 3, 2003 -& JP 2003 142476 A (Asahi Kasei Corp), May 16, 2003 Hexamethylcyclosilizane as agent par. 79 abstract.
Abell, T. et. al.: “Damage minimized plasma pore sealing of microporous low k dielectrics” Microelectronic Engineering, Elsevier Publishers Bv., Amsterdam, NL, vol. 76, No. 1-4, Oct. 2004, pp. 16-19, XP004565763, ISSN: 0167-9317, the whole document.
“Fabrication of Moisture-Desensitized Freestanding Structures from InP for Photonic-MEMS Applications.” Shah, Mithilesh A., et al. Journal of the Electrochemical Society, vol. 153, Issue 1, pp. G7-G11 (2006).
“Observation of intrusion rates of hexamethyldisilazane during supercritical carbon dioxide functionalization of triethoxyfluorosilane low-k films.” Capani, P. M., et al., Materials Research Society Symposium Proceedings (2005), 863(Materials, Technology and Reliability of Advanced Interconnects—2005), pp. 177-182.
“Dielectric and Mechanical Properties of Surface Modified Organosilicate Films.” Yu, Suzhu, et al., Journal of Sol-Gel Science and Technology (2005), 35(1), pp. 69-75.
“Repair of porous MSW (p-MSQ) films using monochlorosilanes dissolved in supercritical CO2.” Xie, Bo, et al., Diffusion and Defect Data—Solid State Data, Pt. B: Solid State Phenomena (2005), 103-104(Ultra Clean Processing of Silicon Surfaces VII), pp. 323-326.
“Non-damaging cleaning processes for porous low-k materials.” Clark, Philip G., et al. Advanced Metallization Conference 2004, Proceedings of the Conference, San Diego, (2005), 487-491. Publisher: Materials Research Society.
“The reaction of octyldinnethylchlorosilane and supercritical CO2 mixtures with porous methylsilsesquioxane thin films.” Xie, Bo, et al., Advanced Metallization Conference 2004, Proceedings of the Conference, San Diego, (2005), 475-479. Publisher: Materials Research Society, Warrendale, Pa.
“Organic-Functionalized Pure-Silica-Zeolite MFI Low-k Films.” Li, Shuang, et al. Chemistry of Materials (2005), 17(7), pp. 1851-1854.
“Repair of porous methylsilsesquioxane films using

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