Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2008-04-01
2008-04-01
Deo, Duy-Vu N. (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
Reexamination Certificate
active
11169176
ABSTRACT:
A method of removing a defect from a gate stack on a substrate, comprises treating the gate stack with a plasma. The plasma comprises fluorine, the gate stack comprises a gate layer and a metallic layer, and substantially no photoresist is present on the substrate.
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Gopalan Prabhuram
Kabansky Alex
Krishna Vinay
Lee Hean-Cheal
Narayanan Sundar
Cypress Semiconductor Corporation
Dahimene Mahmoud
Deo Duy-Vu N.
Evan Law Group LLC
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