Removing agent composition for a photoresist and process for pro

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Finishing or perfecting composition or product

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430313, 430325, G03C 500

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active

058466959

ABSTRACT:
A removing agent composition for a photoresist comprising 0.01 to 20% by weight of a quaternary ammonium hydroxide, 1 to 80% by weight of a nucleophilic amine having an oxidation-reduction potential, 0.5 to 20% by weight of a sugar and/or a sugar alcohol, and water in the remaining amount; and a process for producing a semiconductor integrated circuit comprising removing a photoresist applied onto an inorganic substrate by using the above removing agent composition.
A layer of a photoresist applied onto an inorganic substrate, a layer of a photoresist remaining after dry etching of an inorganic substrate which is masked by the layer, or residues of a layer of a photoresist remaining after dry etching of an inorganic substrate which is masked by the layer and subsequent ashing of the layer can easily be removed at a low temperature in a short time. The wiring material of the circuit is not corroded at all, and ultra-fine working can be performed.

REFERENCES:
patent: 4786578 (1988-11-01), Neisius et al.
patent: 5091103 (1992-02-01), Dean et al.
patent: 5102777 (1992-04-01), Lin et al.
patent: 5482566 (1996-01-01), Lee
patent: 5612304 (1997-03-01), Honda et al.
Patent Abstracts of Japan, vol. 95, No. 4, 31 May 1995 of JP 07 028254 (Kanto Chem. Co.), 31 Jan. 1995.
Patent Abstracts of Japan, vol.96, No. 2, 29 Feb. 1996 of JP 07 28304 A (Mitsubishi Gas Co.), 27 Oct. 1995.
Wai Mun Lee, "A New Approach in Photoresist Stripping and Post Plasma Etch/Ash Wafer Cleaning for Submicron Processes", Extended Abstracts, Spring Meeting, (1993) May 16-21, Honolulu, vol. 93/1, 1 Jan. 1993, Pennington, NJ, pp. 488-499.
English translation of JP 07028254 cited in the prior office action.

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