Remover solvent for partial removal of photoresist layer

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Finishing or perfecting composition or product

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510176, 134 13, G03F 742, C11D 708

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active

061176230

ABSTRACT:
While it is important in the photolithographic patterning of a photoresist layer on a substrate surface for the manufacture of various electronic devices that the pattern-wise light exposure of the photoresist layer is preceded by partial removal of the photoresist layer on the non-patterning areas such as marginal areas, peripheral areas and back surface opposite to the surface for resist patterning by dissolving away the extraneous photoresist layer with a remover solvent, the invention proposes an improvement in the partial removal of the photoresist layer by using a specific organic solvent or solvent mixture selected relative to the surface tension of the solvent which, in particular, is a mixture of .gamma.-butyrolactone and anisole in a mixing ratio of 70:30 to 97:3 by weight.

REFERENCES:
patent: 5268260 (1993-12-01), Bantu et al.
patent: 5571417 (1996-11-01), Bhatt et al.
patent: 5849467 (1998-12-01), Sato et al.
patent: 5849487 (1998-12-01), Sato et al.
patent: 5866305 (1999-02-01), Chon et al.

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