Remover solution for photoresist

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Finishing or perfecting composition or product

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430309, 430325, 430329, 134 40, 134 42, 1566591, 252162, 252170, 252171, 252172, G03C 500, B08B 700, B44C 122, C11D 343

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active

051852357

ABSTRACT:
The remover solution of the invention comprises (A) from 35 to 80% by weight of an alcoholic solvent such as ethylene glycol monoethyl ether, (B) from 10 to 40% by weight of an organic solvent which is a halogenated hydrocarbon solvent, e.g., 1,2-dichlorobenzene and methylene chloride, an ether solvent, e.g., tetrahydrofuran, or an aromatic solvent, e.g., benzene and xylene, and (C) from 0.1 to 25% by weight of a quaternay ammonium compound such as tetramethyl ammonium hydroxide and trimethyl hydroxyethyl ammonium hydroxide. Different from conventional remover solutions which only can swell cured photoresist compositions, the inventive remover solution has a power to completely dissolve a cured photoresist layer to give a quite satisfactory result in the removing works of patterned photoresist layers in the manufacture of semiconductor devices.

REFERENCES:
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patent: 4239661 (1980-12-01), Muraoka et al.
patent: 4395348 (1983-07-01), Lee
patent: 4396703 (1983-08-01), Matsumoto et al.
patent: 4592787 (1986-06-01), Johnson
patent: 4744834 (1988-05-01), Hag
patent: 4801519 (1989-01-01), Koibuchi et al.
patent: 4904571 (1990-02-01), Miyashita et al.

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