Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-01-11
2005-01-11
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S672000, C438S693000, C438S906000
Reexamination Certificate
active
06841470
ABSTRACT:
A method and an apparatus of removing a particle from a metal plug on a substrate is disclosed. The method comprises introducing a slurry onto the metal layer and polishing the metal layer. A solution comprising hydrogen peroxide is introduced onto the metal plug and at least one particle is removed from the metal plug.
REFERENCES:
patent: 4992135 (1991-02-01), Doan
patent: 5352277 (1994-10-01), Sasaki
patent: 5389194 (1995-02-01), Rostoker et al.
patent: 5478436 (1995-12-01), Winebarger et al.
patent: 5607718 (1997-03-01), Sasaki et al.
patent: 5709755 (1998-01-01), Kuo et al.
patent: 5855792 (1999-01-01), Adams et al.
patent: 5876271 (1999-03-01), Oliver
patent: 5911836 (1999-06-01), Hada et al.
patent: 5990012 (1999-11-01), Robinson et al.
patent: 6022400 (2000-02-01), Izumi et al.
patent: 6043155 (2000-03-01), Homma et al.
patent: 6068787 (2000-05-01), Grumbine et al.
patent: 6068879 (2000-05-01), Pasch
patent: 6071809 (2000-06-01), Zhao
patent: 6099662 (2000-08-01), Wang et al.
patent: 6132289 (2000-10-01), Labunsky et al.
patent: 6149696 (2000-11-01), Jia
patent: 6159858 (2000-12-01), Kishii et al.
patent: 6218306 (2001-04-01), Fishkin et al.
patent: 6368955 (2002-04-01), Easter et al.
patent: 6423148 (2002-07-01), Aoki
patent: 6448182 (2002-09-01), Hall et al.
Chu John
Wang Li-Shun
Blakely , Sokoloff, Taylor & Zafman LLP
Fourson George
Garcia Joannie Adelle
LandOfFree
Removal of residue from a substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Removal of residue from a substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Removal of residue from a substrate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3411814