Removal of plasma etching residues

Details Removal of plasma etching residues Removal of plasma etching residues

1982-03-25

1983-01-25

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134 1, 134 30, 156646, 1566591, 156665, 204192E, 252 791, C23F 102, B08B 312, B08B 600, B08B 700

Patent

active

043701957

ABSTRACT:
An improvement in the etching of aluminum utilizing a carbon-containing etchant gas is provided whereby the residues remaining after etching are treated in a nitrogen glow discharge for a time effective in removing them or rendering them susceptible to removal by conventional means.

REFERENCES:
patent: 4243865 (1981-01-01), Saxena
patent: 4308089 (1981-12-01), Iida et al.
patent: 4325984 (1982-04-01), Galfo
Moran et al., J. Vac. Sci. Technol., vol. 19 (4), pp. 1127-1131, Nov./Dec. 1981.
Busta et al., 1977, I.E.E.E. Inter Electronic Devices Meeting Tech. Digest, Wash., D.C., pp. 12-15, (1977).
IBM Technical Disclosure Bulletin, vol. 21, No. 6, Nov. 1978, Plasma Removal of Residue Following Reactive Ion Etching of Aluminum and Aluminum Alloys by G. T. Chiu et al., p. 2315.
IBM Technical Disclosure Bulletin, vol. 21, No. 10, Mar. 1979, Cleaning of Permalloy Mask After Exposure to Chlorine Rie System by Zarowin, p. 4237.

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